isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 150V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SA1133 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and TV vertical deflection
output applications.
ABSOLUTE MAXIMUM...
