2SC2681

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 115V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1141 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 115 V VCEO Collector-Emitter Voltage 115 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 2.0 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2681 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.45A VBE(on) Base-Emitter On Voltage IC= 4.5A; VCE= 2V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 4.5A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 2V  hFE-1 Classifications R Q 60-120 100-200 2SC2681 MIN TYP. MAX UNIT 1.5 V 2.0 V 50 μA 50 μA 60 200 40 230 pF 80 MHz Notice： ISC r...