isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Complement to...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Complement to Type 2SA1146 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency low power amplifier applications ·Recommend for 70W audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2706
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
2SC2706
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
140
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 5A; VCE= 5V
2.5
V
ICBO
Collector Cutoff Current
VCB= 140V; IE=0
50 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
50 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
55
240
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
30
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
130
pF
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
25
MH...