isc Silicon NPN Power Transistor
2SC2768
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min...
isc Silicon
NPN Power
Transistor
2SC2768
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
200
V
VCEO(SUS) Collector-Emitter Voltage
200
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
2SC2768
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.8A
ICBO
Collector Cutoff ...