2SC2816

isc Silicon NPN Power Transistor 2SC2816 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2816 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE=0 50 μA ICEO Collector Cutoff Current VCE= 350V; RBE= ∞ 50 μA hFE-1 DC Current Gain IC= 2.5A; VCE= 5V 15 hFE-2 DC Current Gain IC= 5A; VCE= 5V 7 Switching times ton Turn-on Time 0.5 μs...