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2SC2832
NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
2SC2832 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA...
INCHANGE
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