isc Silicon NPN Power Transistor
2SC2914
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)...
isc Silicon
NPN Power
Transistor
2SC2914
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
3
A
120
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
hFE-2
DC Current Gain
IC= 10A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
Switching Times
tr
Rise Time
tstg
Storage Time
VCC= 200V; RL= 28.5Ω IB1= -IB2= 0.7A
tf
Fall Time
2SC2914
MIN TYP. MAX UNIT
400
V
500
V
1.0
V
...
