2SC2928

isc Silicon NPN Power Transistor 2SC2928 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.5 A 80 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainig Voltage IC=1mA; IB=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 1200V; IE= 0 ICEO Collector Cutoff Current VCE= 650V; RBE= ∞ Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC= 3A; IB1= 0.6A; IB2= -1.5A; VCC≈ 250V 2SC2928 MIN TYP. MAX UNIT 800...