2SC2981

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 2A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2981 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 850V; IE=0 ICEO Collector Cutoff Current VCE= 650V; RBE=0 hFE-1 DC Current Gain IC= 0.8A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V Switching times ton Turn-on Time tstg Storage Time IC= 4A, IB1= 0.8A; I...