isc Silicon NPN Power Transistor
2SC3026
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·Coll...
isc Silicon
NPN Power
Transistor
2SC3026
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-voltage power switching character display
horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1700
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
6
A
IC(surge) Collector Current-Surge
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
16
A
50
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
ICES
Collector Cutoff Current
VCE= 1700V; RBE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
Switching times
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= 1A; IB2= -2.5A
2SC3026
MIN TYP. MAX UNIT
800
V
6
V
0.5 mA
2.0
V
1.5
V
4
μs
0.5 μs
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