2SC3063

isc Silicon NPN Power Transistor 2SC3063 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV video output amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.2 A 1.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA VBE(on) Base-Emitter On Voltage IC= 30mA; VCE= 10V hFE DC Current Gain IC= 5mA; VCE= 50V fT Current-Gain—Bandwidth Product IE= -20mA; VCE= 30V COB Output Capacitance IE= 0; VCB= 30V, ftest= 1MHz 2SC3063 MIN TYP. MAX UNIT 300 V 300 V 7 V 1.5 V 1.2 V 50 250 70 MHz 2.4 pF Notice： ISC reserves the rights to make changes of the cont...