2SC3146

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.5A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 1.75 W 40 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3146 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; RBE= ∞ VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 7mA VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 7mA ICBO Collector Cutoff Current VCB= 40V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 3.5A; VCE= 2V 2SC3146 MIN TYP. MAX UNIT 70 V 60 V 1.5 V 2.0 V 100 μA 3 mA 2000 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time ...