2SC3163

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@IC= 3A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VCER Collector-Emitter Voltage RBE= 100Ω 450 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 6 ICM Collector Current-Peak 12 IB Base Current-Continuous 2 IBM Base Current-Peak 4 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W 2SC3163 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3163 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=20mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 400V; IB= 0 100 μA ICER Collec...