isc Silicon NPN Power Transistor
DESCRIPTION ·High breakdown voltage -
: VCBO≥900V ·Good Linearity of hFE ·Minimum Lot-...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High breakdown voltage -
: VCBO≥900V ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Switching
Regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3184
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isc Silicon
NPN Power
Transistor
2SC3184
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 300mA; IB= 60mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 60mA; VCE= 5V
10
40
hFE-2
DC Current Gain
IC= 300mA; VCE= 5V
8
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
20
pF
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
15
MHz
hFE-1 Classifications
K
L
M
10-20
15-30
20-40
Notice： ISC reserves the rights to make changes of the content herein the data...
