isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching S...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1290 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifier ·Switching
regulator, dirver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
35
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3254
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isc Silicon
NPN Power
Transistor
2SC3254
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.175A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC=1A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A; IB1= -IB2=...
