2SC3264

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 230V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1295 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 17 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3264 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3264 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 230V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 5A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IE= -2A; VCE= 12V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 5A ,RL= 12Ω, IB1= -IB2= 0.5A,VCC= 60V MIN TYP. MAX UNIT 230 V 2.0 V 100 μA 100 μA 50 140 250 pF 30 MHz 0.3 μs 2.4 μs 0.5 μ...