2SC3280

isc Silicon NPN Power Transistor 2SC3280 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 8A ·Complement to Type 2SA1301 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 6A; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 2SC3280 MIN TYP. MAX UNIT 160...