isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Collector-Emi...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3281
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 8A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 200V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V, ftest= 1MHz
hFE-1 Classificat...