isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 800V(Min) ·High Speed Sw...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 800V(Min) ·High Speed Switching ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCES
Collector-Emitter Voltage
1000
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
2
A
70 W
2.5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3285
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=1mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 5V; f= 1MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A, IB1= 0.4A; IB2= -0.8A, VCC= 250V
2SC...