2SC3296

isc Silicon NPN Power Transistor 2SC3296 TDESCRIPTIONT ·Collector-Emitter Breakdown Voltage- : V = B(BR)CEOB 150V(Min) ·Complement to Type 2SA1304 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAMETER VALUE UNIT V CBO B B Collector-Base Voltage 150 V V CEO B B Collector-Emitter Voltage 150 V V EBO B B Emitter-Base Voltage 5 V I CB B Collector Current-Continuous 1.5 A I BB B Base Current-Continuous Collector Power Dissipation @TBaB=25℃ P CB B Collector Power Dissipation @TBCB=25℃ T JB B Junction Temperature 0.5 A 2 W 20 150 ℃ T stg B B Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VBCE(sat)B Collector-Emitter Saturation Voltage I = CB B 0.5A; I = BB B 50mA VBBE(on)B Base-Emitter On Voltage I = CB B 0.5A; V = CE B B 10V I CBO B B Collector Cutoff Current V = CB B B 120V; I = EB B 0 I EBO B B Emitter Cutoff Current V = EB B B 5V; I = CB B 0 h FE B B DC Current Gain I = CB B 0.5A; V = CE B B 10V f TB B Current-Gain—Bandwidth Product I = CB B 0.5A; V = CE B B 10V C OB B B Output Capacitance I = EB B 0; V = CB B B 10V; f= 1MHz 2SC3296 MIN...