isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 30V(Min) ·Good Linearity ...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1305 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications. ·Car radio, car stereo output stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.3
A
15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3297
isc website: www.iscsemi.com
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isc Silicon
NPN Power
Transistor
2SC3297
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 2.5A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 2V
COB
Output Capacitance
IE=0; VCB= 10V; ftest= 1.0MHz
MIN TYP. MAX UNIT
30
V
0.8
V
1.0
V
1.0 μA
1.0 μA
70
240
25
100
MHz
35
pF
hFE...