isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High R...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for high definition CRT display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
6
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
16
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3482
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 6A
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
tstg
Storage Time
tf
Fall Time
I...