2SC3506

isc Silicon NPN Power Transistor 2SC3506 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 70 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 1000V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 5V; f= 1MHz Switching times ton Turn-On Time tstg Storage Time tf Fall Time IC= 2A; IB1= 0.4A, IB2= -0.8A; VCC= 250V 2SC3506 MIN TYP. MAX UNIT 800 V 1.5 V 1.5 V 50 μA 50 μA 6 4 MHz 1.0 μs 2.5 μs 0.5 μs Notice： ISC res...