isc Silicon NPN Power Transistor
DESCRIPTION
·
·Collector-Emiiter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
·Wide Area of Safe Operation
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PA...
