isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min) ·High Switchin...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
800
V
VCEO Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1
A
25
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SC3749
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 5V
hFE-2
DC Current Gain
IC= 1.5A; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product...