isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide A...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1100
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1.5
A
30
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SC3752
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
2SC3752
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.2A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V...