2SC3831

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3831 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3831 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 5A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -1A; VCE= 12V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC=...