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2SC3856 Data Sheet

NPN Transistor

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2SC3856

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1492 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose ap.

2SC3856

Download 2SC3856 Datasheet

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1492 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3856 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3856 ELECTRICAL CHARACTERISTICS TC=2.




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