2SC3975

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3975 · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3975 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 6A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V...