isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 900V(Min.) ·Wide Area of Sa...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCES
Collector-Emitter Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
2
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
0.3
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC4004
·
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistor
2SC4004
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.2A; IB= 40mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.2A; IB= 40mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
50 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
50 μA
hFE-1
DC Current Gain
IC= 50mA; VCE= 5V
6
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
3
fT
Current-Gain—Bandwidth Product
IC= 50mA; VCE= 1...
