isc Silicon NPN Power Transistor
2SC4105
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 400V(Min.) ...
isc Silicon
NPN Power
Transistor
2SC4105
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
1.5
A
Collector Power Dissipation@TC=25℃
40
PC
W
Collector Power Dissipation@Ta=25℃ 1.75
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.4A; VCE= 5V
hFE-2
DC Gurrent Gain
IC= 2A; VCE= 5V
hFE-3
DC Gurrent Gain
IC= 10mA; VCE= 5V
fT
Cur...