2SC4108

isc Silicon NPN Power Transistor 2SC4108 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 25 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 100 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A ICBO Collector Cutoff Current VCB= 400V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1.6A; VCE= 5V hFE-2 DC Current Gain IC= 8A; VCE= 5V hFE-3 DC Current Gain...