2SC4111

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 22 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 A 150 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4111 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE-1 DC Current Gain IC= 7A; IB= 2.5A VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V Switching times tstg Storage Time tf Fall Time IC= 6A, IB1= -IB2= 1.7A; Lleak= 5μH 2SC4111 MIN ...