2SC5198

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5198 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5198 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 140V ; IE=0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 35 COB Output Capacitance IE=0 ; VCB= 10V;ftest= 1.0MHz 170 pF fT Current-Gain—Bandwidth Product I...