2SD381

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Complement to Type 2SB536 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier, low speed switching. ·Suitable for driver of 60~100 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A IB Base Current 0.3 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD381 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 5mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.3A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 0.1MHz fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 2SD381 MIN TYP. MAX UNIT 2.0 V 1.5 V 1.0 μA 1.0 μA 25 65 40 250 25 pF 45 MHz  ...