2SD389

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD389 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 3V ICBO Collector Cutoff Current VCB= 20V; IE= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 3V hFE-2 DC Current Gain IC= 1A; VCE= 3V  hFE-2 Classifications Q P O 30-60 50-100 80-160 2SD389 MIN TYP. MAX UNIT 60 V 1.0 V 1.4 V 30 μA 1.0 mA 40 30 60 160 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein i...