isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·High Power Dissipation-
: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SB555 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for high-fidelity audio ...
