2SD676

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25℃ ·Complement to Type 2SB656 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 A 125 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD676 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 140V; IE= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V  hFE-1 Classifications B C 60-120 100-200 2SD676 MIN TYP. MAX UNIT 160 V 5 V 2.5 V 1.5 V 1 mA 60 200 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at an...