2SD745

isc Silicon NPN Power Transistor 2SD745 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Complement to Type 2SB705 ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications ·Suitable for output stages of 60~120 watts audio amplifier and voltage regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 50mA; VCE= 5V hFE-2 DC Current Gain IC= 2A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V  hFE-2 Classifications S R Q 40-80 60-120 100-200 2SD745 MIN TYP. MAX UNIT 1.5 V 2.0 V 50 μA ...