2SD792

isc Silicon NPN Power Transistor 2SD792 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCE0 Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 4 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 7 A 35 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A ICBO Collector Cutoff Current VCB= 750V ; IE= 0 VCB= 1500V ; IE= 0 hFE DC Current Gain IC= 4A; VCE= 10V tf Fall Time tstg Storage Time IC= 4A , IBend= 1.8A, LB= 10μH 2SD792 MIN TYP. MAX UNIT 4 V 1.5 V 1.5 V 50 μA 1 mA 4 12 0.7 μs 13 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gui...