isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current -IC= 3A ·Collector-Emitter Breakdown Voltage-
: V(...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector Current -IC= 3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min) ·Complement to Type 2SB744 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio frequency amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
5
A
10 W
1
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD794
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 45V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
2SD794
MIN TYP. MAX UNIT
0.3 2.0
V
0.8 2.0
V
1.0 μA
1.0 μA
30
70
60 100 320
60...
