2SD797

isc Silicon NPN Power Transistor 2SD797 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High Power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 200 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD797 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Voltage Breakdown IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A MIN TYP. MAX UNIT 80 V 0.6 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 3A 1.4 2.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200 hFE-2 DC Current Gain IC= 15A; VCE= 5V 10 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 400 pF fT Current-Gain—Ba...