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2SD799 Dataheets PDF



Part Number 2SD799
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD799 Datasheet2SD799 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 .

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD799 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD799 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA VECF C-E Diode Forward Voltage IF= 4A ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2A ; VCE= 2V hFE-2 DC Current Gain IC= 4A ; VCE= 2V COB Output Capacitance IE= 0 ; VCB= 50V;f= 1.0MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IB1= IB2= 40mA; RL= 25Ω; VCC= 100V; PW= 20μs, Duty Cycle≤1% MIN TYP. MAX UNIT 400 V 2.0 V 2.5 V 3.0 V 0.5 mA 3.0 mA 600 100 35 pF 1 μs 8 μs 5 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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