isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Co...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
6
A
IE
Emitter Current- Continuous
PC
Collector Power Dissipation @ TC≤90℃
TJ
Junction Temperature
6
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
2SD821
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
IC= 5A, IBend= 1A
2SD821
MIN TYP. MAX UNIT
3.0 5.0
V
1.5
V
10 μA
1.0 mA
8
20
165
pF
3
MHz
0.5 1.0 μs
NOTICE： ISC reserves the rights to make changes of the content herein the da...
