2SD835

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignitor ·Relay& solenoid drivers ·Motor controls ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 350 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃/W 2SD835 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD835 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 10mA ICBO Collector...