2SD841

isc Silicon NPN Power Transistor 2SD841 DESCRIPTION ·High Collector-Base Breakdown Voltage : V(BR)CBO= 800V(Min.) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1.5 A Collector Power Dissipation@TC=25℃ 40 PC W Collector Power Dissipation@Ta=25℃ 1.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD841 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Gurrent Gain IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IE= 0.1A; VCE= 10V COB Output Capacitance tf Fall Time IE= 0; VCB= 10V; ftest= 1.0MHz IC= 0.5A; IB1= IB2= 50mA; RL=...