2SD849

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 5 A 25 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD849 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 hFE DC Current Gain IC= 3A; VCE= 10V tf Fall Time tstg Storage Time IC= 3A, IBend= 1A; LB= 20μH 2SD849 MIN TYP. MAX UNIT 5 V 5.0 V 1.5 V 100 μA 1 mA 4 12 0.9 μs 13 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein...