2SD859

isc Silicon NPN Power Transistor 2SD859 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.75 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC= 1A; IB= 0.2A IC= 1A; VCE= 10V ICEO Collector Cutoff Current VCE= 150V; IB= 0 ICES Collector Cutoff Current VCE= 350V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.3A; VCE= 10V hFE-2 DC Current Gain IC= 1A; VCE= 10V Switching Times ton Turn-On Time toff Turn-Off Time IC= 1A; IB1= IB2= 0.1A  hFE-1 Classifications R Q P 40-90 70-150 120-250 2SD859 MIN TYP. MAX UNIT 250 V 1.0 V 1.5 V 1 mA 1 mA 1 mA 40 ...