2SD917

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse ICP Collector Current-Pulse Nonrepetitive PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 15 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD917 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD917 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat) Base -Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICES Collector Cutoff Current VCE= 330V ; VBE= 0 VCE= 300V; VBE= 0, Ta= 100℃ 1 mA 15 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE DC Current Gain tf Fall Time IC= 5A ; VCE= 4V IC= 5A ,RB= 0.5Ω, IB1= 0.8A,VEB= 5V 15 45 0.75 μs NOTICE： ISC reserves the rights to make changes of the content...