2SD951

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 5 A 65 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD951 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VEBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 hFE DC Current Gain IC= 2.5A; VCE= 10V VECF C-E Diode Forward Voltage IF= 4A tstg Storage Time tf Fall Time IC= 2.5A, IBend= 0.8A; LB= 5μH 2SD951 MIN TYP. MAX UNIT 5 V 5.0 V 1.5 V 50 μA 1 mA 3 12 1.7 V 11 μs 0.9 μs NOTICE： ISC reserves the rights to make changes of the conte...